| Автор | W Z Manookian |
| Автор | J I B Wilson |
| Дата выпуска | 1987-10-01 |
| dc.description | The effects of illumination with white light and annealing to 180-200 degrees C on the field-effect conductance of a-Si:H FETS have been investigated. The effects produced by illumination are completely reversed by annealing. The authors find that illumination produces two types of change in the field-effect conductance; first a maximum decrease in the off-conductance of about 300%, with a positive shift of the threshold voltage' and secondly a horizontal displacement of the conductance characteristic in the pre-threshold region with no change in the off-conductance. In both cases there is a movement of the bulk Fermi level with respect to the conduction band mobility edge. These two effects may be produced in a single silicon film sample. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Light-induced changes in the field-effect conductance of hydrogenated amorphous silicon |
| Тип | paper |
| DOI | 10.1088/0268-1242/2/10/004 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 2 |
| Первая страница | 649 |
| Последняя страница | 653 |
| Аффилиация | W Z Manookian; Dept. of Phys., Heriot-Watt Univ., Edinburgh, UK |
| Аффилиация | J I B Wilson; Dept. of Phys., Heriot-Watt Univ., Edinburgh, UK |
| Выпуск | 10 |
