| Автор | L Palaniappan |
| Автор | F D Gnanam |
| Автор | P Ramasamy |
| Дата выпуска | 1987-12-01 |
| dc.description | A study of the temperature dependence of the electrical conductivity in the low-temperature region is made on an SbSI ingot for the first time. The ingot used in the present investigation is grown from melt by the temperature-fluctuation technique. The electrical conductivity is measured by applying a weak DC field along the c axis (needle axis) of the crystals. An anomaly is observed at 225 K in the plot of the electrical conductivity against temperature of the sample. This second-order phase-transition temperature obtained from the electrical conductivity study made on the SbSI ingot is compared with that obtained from other studies made on individual single-crystalline needles as well as inter-growths grown by other techniques and the results are discussed. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | An electrical conductivity study of an SbSI ingot at low temperature |
| Тип | paper |
| DOI | 10.1088/0268-1242/2/12/006 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 2 |
| Первая страница | 790 |
| Последняя страница | 792 |
| Аффилиация | L Palaniappan; Crystal Growth Centre, Anna Univ., Madras, India |
| Аффилиация | F D Gnanam; Crystal Growth Centre, Anna Univ., Madras, India |
| Аффилиация | P Ramasamy; Crystal Growth Centre, Anna Univ., Madras, India |
| Выпуск | 12 |
