| Автор | H L Kwok |
| Автор | Y W Lam |
| Автор | S P Wong |
| Дата выпуска | 1987-05-01 |
| dc.description | Antimony is an n-type dopant in silicon sometimes used in place of phosphorus and arsenic. The authors studied the properties of Schottky barriers and shallow p-n junctions formed on silicon by recoil implantation. The main purposes were to study the properties of layers prepared using this technique and to examine device characteristics. It was observed that very shallow and yet highly doped layers could be formed and the basic properties of the antimony-doped layers were similar to those of layers made by direct implantation. As reported, the annealing temperature plays an important role in determining the antimony activities. When argon was used as the primary ion, Schottky diodes were formed at low annealing temperatures. For p-type substrates, shallow p-n junctions were formed if the annealing was at 1000 degrees C. The junction depth was about 300 AA. Sharp breakdowns could be observed at voltages above 40 V. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Schottky barriers and extremely shallow p-n junctions formed by antimony recoil implantation into silicon |
| Тип | paper |
| DOI | 10.1088/0268-1242/2/5/007 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 2 |
| Первая страница | 288 |
| Последняя страница | 292 |
| Аффилиация | H L Kwok; Dept. of Electron., Chinese Univ. of Hong Kong, Shatin NT, Hong Kong |
| Аффилиация | Y W Lam; Dept. of Electron., Chinese Univ. of Hong Kong, Shatin NT, Hong Kong |
| Аффилиация | S P Wong; Dept. of Electron., Chinese Univ. of Hong Kong, Shatin NT, Hong Kong |
| Выпуск | 5 |
