| Автор | N R J Poolton |
| Автор | J E Nicholls |
| Автор | J J Davies |
| Автор | B Cockayne |
| Автор | P J Wright |
| Дата выпуска | 1987-07-01 |
| dc.description | ODMR spectra have been observed from epilayers of ZnS grown by MOCVD on (100) GaAs. ODMR signals from zinc vacancies are identified, which shows that these centres can form isolated defects in the layers during growth. In addition two broad, isotropic signals are observed. One of these results from isolated shallow donors, whilst it is suggested that the other results from zinc-vacancy-donor pairs in which there is a strong exchange interaction between the zinc vacancy and the donor. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Optically detected magnetic resonance studies of zinc vacancy centres in MOCVD epitaxial ZnS |
| Тип | lett |
| DOI | 10.1088/0268-1242/2/7/009 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 2 |
| Первая страница | 448 |
| Последняя страница | 451 |
| Аффилиация | N R J Poolton; Dept. of Phys., Hull Univ., UK |
| Аффилиация | J E Nicholls; Dept. of Phys., Hull Univ., UK |
| Аффилиация | J J Davies; Dept. of Phys., Hull Univ., UK |
| Аффилиация | B Cockayne; Dept. of Phys., Hull Univ., UK |
| Аффилиация | P J Wright; Dept. of Phys., Hull Univ., UK |
| Выпуск | 7 |
