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Автор M A Hopkins
Автор R J Nicholas
Автор P Pfeffer
Автор W Zawadzki
Автор D Gauthier
Автор J C Portal
Автор M A DiForte-Poisson
Дата выпуска 1987-09-01
dc.description The conduction bands in GaAs and In have been studied very accurately through the cyclotron resonance over a wide range of energies using the photoconductive detection technique. Pronounced band non-parabolicity has been measured in GaAs. Values for the band-edge masses of 0.0660 m<sub>0</sub> and 0.07927 m<sub>0</sub> respectively have been determined. A five-level k.p model of the band structure in the presence of a magnetic field has been used to describe the data where resonant and non-resonant polaron contributions to electron energies are included in the theory. The non-parabolicity and spin-doublet splitting of the cyclotron resonance are well described by the employed formalism in both materials and the theory also gives a reasonable account of the anisotropy of the band in GaAs. The fit to experimental data allowed the authors to determine the matrix element of momentum Q between the higher conduction and valence bands in both materials.
Формат application.pdf
Издатель Institute of Physics Publishing
Название A study of the conduction band non-parabolicity, anisotropy and spin splitting in GaAs and InP
Тип paper
DOI 10.1088/0268-1242/2/9/002
Electronic ISSN 1361-6641
Print ISSN 0268-1242
Журнал Semiconductor Science and Technology
Том 2
Первая страница 568
Последняя страница 577
Аффилиация M A Hopkins; Clarendon Lab., Oxford Univ., UK
Аффилиация R J Nicholas; Clarendon Lab., Oxford Univ., UK
Аффилиация P Pfeffer; Clarendon Lab., Oxford Univ., UK
Аффилиация W Zawadzki; Clarendon Lab., Oxford Univ., UK
Аффилиация D Gauthier; Clarendon Lab., Oxford Univ., UK
Аффилиация J C Portal; Clarendon Lab., Oxford Univ., UK
Аффилиация M A DiForte-Poisson; Clarendon Lab., Oxford Univ., UK
Выпуск 9

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