Fourier transform photoluminescence excitation spectroscopy: application to InGaAs quantum wells
B Hamilton; G Clarke; D Rogers; D Wood; R H Walling; J I Davies; M D Scott; B Hamilton; Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK; G Clarke; Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK; D Rogers; Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK; D Wood; Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK; R H Walling; Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK; J I Davies; Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK; M D Scott; Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK
Журнал:
Semiconductor Science and Technology
Дата:
1988-10-01
Аннотация:
The authors give a preliminary report of a new technique development in the field of optical spectroscopy of semiconductors. They have used Fourier transform optical methods to produce excitation spectra in semiconductors. Here they report on its application to lattice-matched InGaAs/InP quantum wells. The general principles of the technique are outlined and its application to other materials systems is discussed.
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