| Автор | D C Herbert |
| Дата выпуска | 1988-02-01 |
| dc.description | An analysis of electronic structure and scattering in GaAs/AlGaAs superlattices suggests the possibility of a new class of electronic device exploiting the properties of hot electrons in the higher sub-bands. In particular it is shown that the electron mass in the higher sub-bands can be very low, leading to high-sub-band mobility, and the inter-sub-band scattering can be strongly suppressed, leading to long energy relaxation times and very long quasi-ballistic path lengths. It is suggested that these ideas can be readily adapted to achieve high transport factors in hot-electron transistors by replacing the conventional homogeneous-base region by an appropriate superlattice. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Structured-base hot-electron transistors. I. Scattering rates |
| Тип | paper |
| DOI | 10.1088/0268-1242/3/2/005 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 3 |
| Первая страница | 101 |
| Последняя страница | 110 |
| Аффилиация | D C Herbert; Royal Signals & Radar Establ., Malvern, UK |
| Выпуск | 2 |
