| Автор | S N Chattopadhyay |
| Автор | B B Pal |
| Дата выпуска | 1988-03-01 |
| dc.description | A unified model for the shallow channel MESFET device has been developed by considering a generalised doping distribution of impurities in the active region. The I-V characteristics, threshold voltage and transconductance are expressed in terms of fabricational and physical parameters for a Si MESFET structure. Plots have been made and compared for the current against the voltage, the threshold voltage against the concentration and the transconductance against the gate-source voltage for three different impurity profiles, namely, Gaussian, erfc and constant doping. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | A unified model for MESFET analysis |
| Тип | paper |
| DOI | 10.1088/0268-1242/3/3/004 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 3 |
| Первая страница | 185 |
| Последняя страница | 190 |
| Аффилиация | S N Chattopadhyay; Dept. of Electron. Eng., Inst. of Technol., Banaras Hindu Univ., Varanasi, India |
| Аффилиация | B B Pal; Dept. of Electron. Eng., Inst. of Technol., Banaras Hindu Univ., Varanasi, India |
| Выпуск | 3 |
