| Автор | D A Woolf |
| Автор | D I Westwood |
| Автор | R H Williams |
| Дата выпуска | 1989-12-01 |
| dc.description | Si(100) substrates were prepared for the heteroepitaxial growth of GaAs using four simple cleaning procedures. The effects of these different techniques upon the quality of GaAs/Si material have been assessed in situ by reflection high-energy electron diffraction (RHEED); and ex situ employing double-crystal X-ray diffraction (XRD), Hall effect and current-voltage and capacitance-voltage measurements of Au-Schottky diodes fabricated on the GaAs epilayer. X-ray photoelectron spectroscopy (XPS) was utilised to investigate the Si surfaces after they had received the various etching treatments. Results indicate that an HF etched Si surface is not suitable for initiating the heteroepitaxial growth of GaAs. However, when the HF etch is used in conjunction with a reoxidation etch and/or the deposition and thermal desorption of a 500 AA GaAs prelayer, good-quality GaAs epilayers on Si may be produced. The current-voltage characteristics of the Schottky diodes test that this technique is a sensitive test of the GaAs/Si material 'quality'. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | The molecular beam epitaxial growth of GaAs/Si(100): aspects of substrate preparation |
| Тип | paper |
| DOI | 10.1088/0268-1242/4/12/014 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 4 |
| Первая страница | 1127 |
| Последняя страница | 1134 |
| Аффилиация | D A Woolf; Dept. of Phys., Coll. of Cardiff, Wales Univ., UK |
| Аффилиация | D I Westwood; Dept. of Phys., Coll. of Cardiff, Wales Univ., UK |
| Аффилиация | R H Williams; Dept. of Phys., Coll. of Cardiff, Wales Univ., UK |
| Выпуск | 12 |
