| Автор | B K Jones |
| Автор | P C Russell |
| Дата выпуска | 1989-02-01 |
| dc.description | The 1/f noise in power VMOS transistors has been measured. In the ohmic device channel the number fluctuation is comparable with that in other MOS devices but is more variable with gate voltage. In saturation, the noise and DC characteristics were measured at constant temperature using pulsed methods. Using a model of the device operation and the measured ohmic channel noise, the measured noise in saturation was compared with the calculated value. Reasonable agreement was found except for a peak just before saturation. This is ascribed to a non-uniform defect distribution along the channel. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | 1/f noise in VMOS power transistors |
| Тип | paper |
| DOI | 10.1088/0268-1242/4/2/005 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 4 |
| Первая страница | 82 |
| Последняя страница | 86 |
| Аффилиация | B K Jones; Dept. of Phys., Lancaster Univ., UK |
| Аффилиация | P C Russell; Dept. of Phys., Lancaster Univ., UK |
| Выпуск | 2 |
