A non-destructive measurement on the damage of silicon induced by a 30 eV Ar magnetron discharge
F Y Chen; Y H Liou; F Y Chen; Dept. of Phys., Nat. Central Univ., Chungli, Taiwan; Y H Liou; Dept. of Phys., Nat. Central Univ., Chungli, Taiwan
Журнал:
Semiconductor Science and Technology
Дата:
1989-07-01
Аннотация:
The damage of a Si substrate processed in a 30 eV Ar magnetron discharge has been revealed, for the first time, from the non-destructive measurement of carrier bulk lifetime, carrier diffusion constant and surface recombination velocity by the photoinduced modulation absorption technique. It was found that slight damage occurring at substrate enhances the surface recombination velocity only little, while severe damage in the bulk much reduces the carrier diffusion. However, no significant change of the carrier bulk lifetime due to bulk damage was observed.
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