| Автор | D D Edwall |
| Автор | J S Chen |
| Автор | J Bajaj |
| Автор | E R Gertner |
| Дата выпуска | 1990-03-01 |
| dc.description | The authors compare the material properties of conventional- and interdiffused-grown layers of Hg<sub>1-x</sub>Cd<sub>x</sub>Te/GaAs grown by metalorganic chemical vapour deposition (MOCVD). These results are also compared with those of state-of-the-art LPE HgCdTe/CdZnTe grown from Te-rich solutions. Data are presented on surface morphology, compositional uniformity, double-crystal X-ray diffraction, chemical defect etching, Hall effect, minority carrier lifetime and laser-beam-induced current (LBIC) characterisation on (111)B, (221) and (100) orientations. The compositional uniformity is 3.3% for 3 in diameter HgCdTe/GaAs. The interdiffused growth method results in better compositional uniformity than the conventional method, while the structural quality of layers grown by both techniques is similar. Etch pit densities of (1-2)*10<sup>6</sup> cm<sup>-2</sup> are routinely obtained for (111)B and (221) orientations, while values as low as 5*10<sup>5</sup> cm<sup>-2</sup> have been occasionally observed. Initial data are also presented for HgCdTe layers grown on (100)GaAs/Si substrates. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | MOCVD Hg<sub>1-x</sub>Cd<sub>x</sub>Te/GaAs for IR detectors |
| Тип | paper |
| DOI | 10.1088/0268-1242/5/3S/049 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 5 |
| Первая страница | S221 |
| Последняя страница | S224 |
| Аффилиация | D D Edwall; Rockwell Int. Sci. Center, Thousand Oaks, CA, USA |
| Аффилиация | J S Chen; Rockwell Int. Sci. Center, Thousand Oaks, CA, USA |
| Аффилиация | J Bajaj; Rockwell Int. Sci. Center, Thousand Oaks, CA, USA |
| Аффилиация | E R Gertner; Rockwell Int. Sci. Center, Thousand Oaks, CA, USA |
| Выпуск | 3S |
