| Автор | J J Liou |
| Дата выпуска | 1990-04-01 |
| dc.description | The collector-emitter offset voltage V<sub>CE,offset</sub> of heterojunction bipolar transistors (HBTS) stems mainly from the asymmetry between the emitter and collector junctions in such devices. Based on device physics, they have developed analytical models for predicting V<sub>CE,offset</sub> of InAlAs/InGaAs and AlGaAs/GaAs single and double heterojunction bipolar transistors (SHBTS and DHBTS). Reasonable agreement is found when the present models are compared with data taken from InAlAs/InGaAs SHBTS and DHBTS grown by molecular beam epitaxy. Comparisons between the offset voltages of InAlAs/InGaAs and AlGaAs/GaAs HBTS are also included. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | A study of the collector-emitter offset voltage of InAlAs/InGaAs and AlGaAs/GaAs heterojunction bipolar transistors |
| Тип | lett |
| DOI | 10.1088/0268-1242/5/4/015 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 5 |
| Первая страница | 355 |
| Последняя страница | 357 |
| Аффилиация | J J Liou; Dept. of Electr. Eng., Univ. of Central Florida, Orlando, FL, USA |
| Выпуск | 4 |
