Electron wave interference effects in CMT and quantum-size devices
G Nimtz; J X Huang; J Lange; L Mester; H Spieker; G Nimtz; II Phys. Inst., Koln Univ., Germany; J X Huang; II Phys. Inst., Koln Univ., Germany; J Lange; II Phys. Inst., Koln Univ., Germany; L Mester; II Phys. Inst., Koln Univ., Germany; H Spieker; II Phys. Inst., Koln Univ., Germany
Журнал:
Semiconductor Science and Technology
Дата:
1991-12-01
Аннотация:
The authors report on electron interference effects in n-Hg<sub>0.8</sub>Cd<sub>0.2</sub>Te (CMT). This narrow-gap semiconductor has a very light effective electron mass and a comparatively long electron wave coherence length. Due to these properties a non-classical conductivity was observed in bulk samples at elevated temperatures up to 35 K. Dimensional crossovers were discovered in samples as large as 1*2.5* 35 mu m<sup>3</sup>: with decreasing temperature size-quantization from three- via two- to one-dimensional behaviour takes place. The evidence of pronounced electron wave interference effects favours CMT as a candidate for novel quantum size devices, as cutoff wavelength transistors or quantum-valve infrared detectors.
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