Semiconductor quantum wells with in-plane magnetic field: the self-consistent treatment
B Mitrovic; V Milanovic; Z Ikonic; B Mitrovic; High Tech. Sch., Pozarevac, Yugoslavia; V Milanovic; High Tech. Sch., Pozarevac, Yugoslavia; Z Ikonic; High Tech. Sch., Pozarevac, Yugoslavia
Журнал:
Semiconductor Science and Technology
Дата:
1991-02-01
Аннотация:
A method for self-consistent calculation of the energy structure of semiconductor quantum wells with in-plane magnetic field that takes into account nonuniformity of material parameters is proposed. Numerical results for GaAs quantum wells in Al<sub>x</sub>Ga<sub>1-x</sub>As bulk are given for the magnetic field range 0-15 T and briefly discussed. An unusual nonmonotonic dependence of conduction band edge on magnetic field is observed.
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