Comments on the origin of low-energy structure observed in the far-infrared cyclotron resonance of ultra-high mobility n-GaAs and n-InP
S J Hawksworth; R T Grimes; E P Pearl; M B Stanaway; J M Chamberlain; J L Dunn; C A Bates; S P Najda; C J G M Langerak; J Singleton; C R Stanley; S J Hawksworth; Dept. of Phys., Nottingham Univ., UK; R T Grimes; Dept. of Phys., Nottingham Univ., UK; E P Pearl; Dept. of Phys., Nottingham Univ., UK; M B Stanaway; Dept. of Phys., Nottingham Univ., UK; J M Chamberlain; Dept. of Phys., Nottingham Univ., UK; J L Dunn; Dept. of Phys., Nottingham Univ., UK; C A Bates; Dept. of Phys., Nottingham Univ., UK; S P Najda; Dept. of Phys., Nottingham Univ., UK; C J G M Langerak; Dept. of Phys., Nottingham Univ., UK; J Singleton; Dept. of Phys., Nottingham Univ., UK; C R Stanley; Dept. of Phys., Nottingham Univ., UK
Журнал:
Semiconductor Science and Technology
Дата:
1992-12-01
Аннотация:
Recently optically detected cyclotron resonance spectra reported by Ahmed et al. in ultra-pure n-GaAs have revealed low-energy structure associated with the cyclotron resonance. The authors have investigated the far-infrared photoconductive response under conditions of cyclotron resonance in these n-GaAs ( mu approximately=400000 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>) samples and also in n-InP ( mu approximately=170000 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>) samples grown by MBE. The suggestion that the structure arises from transitions involving non-parabolicity and polaron coupling effects is discounted using a five-level P.p calculation as found in the literature. Other possible origins, supported by appropriate theory, are suggested for this structure.
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