| Автор | J E M Haverkort |
| Автор | M P Schuwer |
| Автор | M R Leys |
| Автор | J H Wolter |
| Дата выпуска | 1992-01-01 |
| dc.description | The authors have investigated spatially resolved photoluminescence spectra around several alpha - and lambda -type oval defects in GaAs/AlGaAs multiple-quantum-well structures. In their low-temperature photoluminescence set-up they combine a high spectral resolution with a 2 mu m spot size on the sample. In the alpha -type defects the authors observe a 25-45 meV low-energy tail of the main quantum well recombination peak near the core of the oval defect as well as an approximately 1 meV line broadening originating from two regions which are symmetrically located at either side of the (110) symmetry axis of the defect. These line-broadening effects are explained by vertical growth rate variations within the oval defect. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Spatial variations of photoluminescence line broadening around oval defects in GaAs/AlGaAs multiple quantum wells |
| Тип | paper |
| DOI | 10.1088/0268-1242/7/1A/011 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 7 |
| Первая страница | A59 |
| Последняя страница | A62 |
| Аффилиация | J E M Haverkort; Dept. of Phys., Eindhoven Univ. of Technol., Netherlands |
| Аффилиация | M P Schuwer; Dept. of Phys., Eindhoven Univ. of Technol., Netherlands |
| Аффилиация | M R Leys; Dept. of Phys., Eindhoven Univ. of Technol., Netherlands |
| Аффилиация | J H Wolter; Dept. of Phys., Eindhoven Univ. of Technol., Netherlands |
| Выпуск | 1A |
