| Автор | V A Chitta |
| Автор | R E M de Bekker |
| Автор | J C Maan |
| Автор | S J Hawksworth |
| Автор | J M Chamberlain |
| Автор | M Henini |
| Автор | G Hill |
| Дата выпуска | 1992-03-01 |
| dc.description | The authors have investigated the influence of far infrared radiation on the tunnel current of GaAs/(GaAl)As double-barrier resonant tunnelling devices. From the analysis of the far infrared radiation response, as a function of bias voltage, for different radiation energies, an upper limit for the scattering time in the well is determined. The scattering time is found to be shorter than the tunnelling time, which indicates that tunnelling is mainly sequential in the samples studied. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Photon-assisted tunnelling in sequential resonant tunnelling devices |
| Тип | paper |
| DOI | 10.1088/0268-1242/7/3/028 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 7 |
| Первая страница | 432 |
| Последняя страница | 435 |
| Аффилиация | V A Chitta; Max Planck Inst. fur Festkorperforschung, Grenoble, France |
| Аффилиация | R E M de Bekker; Max Planck Inst. fur Festkorperforschung, Grenoble, France |
| Аффилиация | J C Maan; Max Planck Inst. fur Festkorperforschung, Grenoble, France |
| Аффилиация | S J Hawksworth; Max Planck Inst. fur Festkorperforschung, Grenoble, France |
| Аффилиация | J M Chamberlain; Max Planck Inst. fur Festkorperforschung, Grenoble, France |
| Аффилиация | M Henini; Max Planck Inst. fur Festkorperforschung, Grenoble, France |
| Аффилиация | G Hill; Max Planck Inst. fur Festkorperforschung, Grenoble, France |
| Выпуск | 3 |
