Investigation of the L<sub>6</sub>-X<sub>6</sub> intervalley scattering in Al<sub>x</sub>Ga<sub>1-x</sub>As by measuring hot carrier dynamics in a K not=0 satellite valley
W B Wang; Kai Shum; R R Alfano; D Szmyd; A J Nozik; W B Wang; Dept. of Electr. Eng., City Univ. of New York, NY, USA; Kai Shum; Dept. of Electr. Eng., City Univ. of New York, NY, USA; R R Alfano; Dept. of Electr. Eng., City Univ. of New York, NY, USA; D Szmyd; Dept. of Electr. Eng., City Univ. of New York, NY, USA; A J Nozik; Dept. of Electr. Eng., City Univ. of New York, NY, USA
Журнал:
Semiconductor Science and Technology
Дата:
1992-03-01
Аннотация:
The time evolution of the electron population in the bottom of the X<sub>6</sub> valley in Al<sub>0.6</sub>Ga<sub>0.4</sub>As was obtained by a femtosecond visible-pump and infrared (IR)-probe absorption spectroscopy. The L<sub>6</sub> to X<sub>6</sub> intervalley scattering time of approximately 200 fs was determined from the measured kinetic data. The role of the L<sub>6</sub> to X<sub>6</sub> intervalley scattering for the relaxation process of hot carriers was revealed.
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