Influence of nonparabolicity on hot electrons in n-type gallium arsenide

Hot-electron transport in n-type GaAs has been investigated in the crossed applied DC electric field and DC magnetic field. The energy band structure of conduction electrons is taken to be a nonparabolic band and the dominant interaction between hot electrons and lattices is assumed to be the deformation-potential coupling. Results show that the dissipative current density increases nonlinearly with the applied electric field owing to the nonparabolic band structure of electrons in semiconductors. In the lower electric field region, the dependence of the current density on temperature does not appear to follow a regular trend. It is also shown that the current density depends strongly on the magnetic field.