| Автор | P M Martin |
| Автор | R K Hayden |
| Автор | C R H White |
| Автор | M Henini |
| Автор | I Eaves |
| Автор | D K Maude |
| Автор | J C Portal |
| Автор | G Hill |
| Автор | M A Pate |
| Дата выпуска | 1992-03-01 |
| dc.description | The authors observe resonant tunnelling of electrons and holes in a GaAs p-i-n diode incorporating two AlAs barriers in the undoped region. Peaks due to the HH1, LH1, E1 and HH2 (E=electron, LH=light hole, HH=heavy hole) resonances are observed, in that order of increasing voltage. The voltage separation of the LH1 and E1 resonance is significantly larger than expected from a simple quantum mechanical model due to an interaction effect involving resonant buildup of electron space charge in the quantum well. High magnetic fields B//J and B perpendicular to J are used to investigate the device and confirm the assignment of the resonances. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Resonant magnetotunnelling of electrons and holes in a p-i-n diode device incorporating a double barrier structure |
| Тип | paper |
| DOI | 10.1088/0268-1242/7/3B/118 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 7 |
| Первая страница | B456 |
| Последняя страница | B459 |
| Аффилиация | P M Martin; Dept. of Phys., Nottingham Univ., UK |
| Аффилиация | R K Hayden; Dept. of Phys., Nottingham Univ., UK |
| Аффилиация | C R H White; Dept. of Phys., Nottingham Univ., UK |
| Аффилиация | M Henini; Dept. of Phys., Nottingham Univ., UK |
| Аффилиация | I Eaves; Dept. of Phys., Nottingham Univ., UK |
| Аффилиация | D K Maude; Dept. of Phys., Nottingham Univ., UK |
| Аффилиация | J C Portal; Dept. of Phys., Nottingham Univ., UK |
| Аффилиация | G Hill; Dept. of Phys., Nottingham Univ., UK |
| Аффилиация | M A Pate; Dept. of Phys., Nottingham Univ., UK |
| Выпуск | 3B |
