Impact ionization: beyond the Golden Rule
J Bude; K Hess; G J Iafrate; J Bude; Beckman Inst. for Adv. Sci. & Technol., Illinois Univ., Urbana, IL, USA; K Hess; Beckman Inst. for Adv. Sci. & Technol., Illinois Univ., Urbana, IL, USA; G J Iafrate; Beckman Inst. for Adv. Sci. & Technol., Illinois Univ., Urbana, IL, USA
Журнал:
Semiconductor Science and Technology
Дата:
1992-03-01
Аннотация:
The influence of collision broadening due to phonons and the intra-collisional field effect on the inverse Auger process have been examined. Results are presented for silicon and show for the first time the wave-vector dependence of the ionization rate including collision broadening.
209.6Кб