| Автор | F F Ouali |
| Автор | L J Challis |
| Автор | J Cooper |
| Дата выпуска | 1992-04-01 |
| dc.description | Upper limits have been obtained for the size of any asymmetry in the power dissipation between the current entry and exit points of a Si MOSFET in a quantizing magnetic field. Measurements have been made for power inputs between 0.3 and 2000 mu W and for filling factors between 4 and 32. These show that if the total power dissipated I<sup>2</sup>R<sub>H</sub> is shared between the current entry and exist points in proportions (50+or-x)%, then for example at 8 mu W, x<or=1.35 for i=8. No evidence was obtained for any additional dissipation close to the electron entry point near to quantum Hall breakdown. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | A search for asymmetry in the dissipation between the current entry and exit points in the quantum Hall regime of a silicon MOSFET |
| Тип | paper |
| DOI | 10.1088/0268-1242/7/4/030 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 7 |
| Первая страница | 608 |
| Последняя страница | 611 |
| Аффилиация | F F Ouali; Dept. of Phys., Nottingham Univ., UK |
| Аффилиация | L J Challis; Dept. of Phys., Nottingham Univ., UK |
| Аффилиация | J Cooper; Dept. of Phys., Nottingham Univ., UK |
| Выпуск | 4 |
