| Автор | Kow-Ming Chang |
| Автор | Jung-Yu Tsai |
| Дата выпуска | 1992-06-01 |
| dc.description | Two new, simple, general and rigorous closed-form integral solutions to the base current density and to the base transit time for electron transport in NPN bipolar transistors with heavily doped base and non-uniform band structure are presented. The expressions include the effects of non-uniform band structure, the influence of Fermi-Dirac statistics, the position-dependent mobility and the velocity saturation effect at the base-collector depletion-layer edge on the base side. An application of this new simplified base current density of equation to Early voltage in a narrow-base bipolar transistor is illustrated. A simple example for the effects of the minority-carrier density and of the base built-in field on the minority-carrier base transit time is also qualitatively discussed. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Two new generalized equations for minority-carrier transport in bipolar transistors with heavily doped base and non-uniform band structure |
| Тип | paper |
| DOI | 10.1088/0268-1242/7/6/011 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 7 |
| Первая страница | 799 |
| Последняя страница | 803 |
| Аффилиация | Kow-Ming Chang; Dept. of Electron. Eng., National Chiao Tung Univ., Hsin-Chu, Taiwan |
| Аффилиация | Jung-Yu Tsai; Dept. of Electron. Eng., National Chiao Tung Univ., Hsin-Chu, Taiwan |
| Выпуск | 6 |
