| Автор | G J Papaioannou |
| Автор | V Ioannou-Sougleridis |
| Автор | T Lalinski |
| Автор | J Kuzmik |
| Автор | M Porges |
| Автор | C D Kourkoutas |
| Дата выпуска | 1992-07-01 |
| dc.description | The PHOTOFET method is applied to submicrometre MESFETS processed on ion-implanted Cr-doped substrates. It is demonstrated that the magnitude of the photoconductivity both under extrinsic and intrinsic illumination is determined by the substrate leakage current, which is a function of the device drain bias. A semiempirical modeling of the dependence of the photoconductivity on the device bias gives a power-law relation between the leakage current and the drain bias. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | The PHOTOFET method in submicrometre GaAs MESFETS: substrate leakage current effect |
| Тип | paper |
| DOI | 10.1088/0268-1242/7/7/011 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 7 |
| Первая страница | 935 |
| Последняя страница | 939 |
| Аффилиация | G J Papaioannou; Dept. of Phys., Athens Univ., Zographos, Greece |
| Аффилиация | V Ioannou-Sougleridis; Dept. of Phys., Athens Univ., Zographos, Greece |
| Аффилиация | T Lalinski; Dept. of Phys., Athens Univ., Zographos, Greece |
| Аффилиация | J Kuzmik; Dept. of Phys., Athens Univ., Zographos, Greece |
| Аффилиация | M Porges; Dept. of Phys., Athens Univ., Zographos, Greece |
| Аффилиация | C D Kourkoutas; Dept. of Phys., Athens Univ., Zographos, Greece |
| Выпуск | 7 |
