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Автор P H Wilson
Автор M Lamm
Автор H C Liu
Автор J Li
Автор M Buchanan
Автор Z R Wasilewski
Автор J G Simmons
Автор W J Schaff
Дата выпуска 1993-11-01
dc.description A systematic comparison of quantum well infrared photodetectors (QWIPS) made by different molecular beam epitaxy (MBE) systems is presented. QWIPS with identical layer specifications were requested from three different MBE facilities. Measurements of dark current, detector responsivities, infrared absorption and detectivities were carried out. Although good uniformity between detectors was obtained within the same MBE wafer, variations were observed between samples with the same specifications from different MBE systems. The results of this study illustrate the present accuracy of MBE technology.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Comparison of quantum well infrared photodetectors grown on different molecular beam epitaxial systems
Тип paper
DOI 10.1088/0268-1242/8/11/012
Electronic ISSN 1361-6641
Print ISSN 0268-1242
Журнал Semiconductor Science and Technology
Том 8
Первая страница 2010
Последняя страница 2014
Аффилиация P H Wilson; Centre for Electrophotonic Mater. & Devices, McMaster Univ., Hamilton, Ont., Canada
Аффилиация M Lamm; Centre for Electrophotonic Mater. & Devices, McMaster Univ., Hamilton, Ont., Canada
Аффилиация H C Liu; Centre for Electrophotonic Mater. & Devices, McMaster Univ., Hamilton, Ont., Canada
Аффилиация J Li; Centre for Electrophotonic Mater. & Devices, McMaster Univ., Hamilton, Ont., Canada
Аффилиация M Buchanan; Centre for Electrophotonic Mater. & Devices, McMaster Univ., Hamilton, Ont., Canada
Аффилиация Z R Wasilewski; Centre for Electrophotonic Mater. & Devices, McMaster Univ., Hamilton, Ont., Canada
Аффилиация J G Simmons; Centre for Electrophotonic Mater. & Devices, McMaster Univ., Hamilton, Ont., Canada
Аффилиация W J Schaff; Centre for Electrophotonic Mater. & Devices, McMaster Univ., Hamilton, Ont., Canada
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