| Автор | P K Hurley |
| Автор | C J Kiely |
| Автор | S Hall |
| Автор | L G Earwaker |
| Автор | M C Briggs |
| Автор | J M Keen |
| Дата выпуска | 1993-12-01 |
| dc.description | Experimental observations are presented which indicate that porous silicon can be selectively converted to silicon dioxide. By presenting cross-sectional transmission electron micrographs, nuclear analysis data and electrical data, it is demonstrated that the selective oxidation occurs when the surface of the porous silicon has been amorphized by ion implantation. Electrical results are presented which show that the oxide is of sufficient quality for isolation purposes. It is of note that the partially oxidized porous silicon underlying the surface oxide layer, which initially was constituted of very thin, vertical, silicon 'wires', still exhibits a relatively low resistivity. The significance of these observations for device fabrication is briefly discussed. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Partial oxidation of porous silicon |
| Тип | paper |
| DOI | 10.1088/0268-1242/8/12/022 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 8 |
| Первая страница | 2168 |
| Последняя страница | 2175 |
| Аффилиация | P K Hurley; Dept. of Electr. Eng. & Electron., Liverpool Univ., UK |
| Аффилиация | C J Kiely; Dept. of Electr. Eng. & Electron., Liverpool Univ., UK |
| Аффилиация | S Hall; Dept. of Electr. Eng. & Electron., Liverpool Univ., UK |
| Аффилиация | L G Earwaker; Dept. of Electr. Eng. & Electron., Liverpool Univ., UK |
| Аффилиация | M C Briggs; Dept. of Electr. Eng. & Electron., Liverpool Univ., UK |
| Аффилиация | J M Keen; Dept. of Electr. Eng. & Electron., Liverpool Univ., UK |
| Выпуск | 12 |
