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Автор K H Herrmann
Автор U Muller
Автор V Melzer
Дата выпуска 1993-01-01
dc.description (Hg,Cd)Te was the first mixed crystal which allowed the study of the transition from a wide gap semiconductor (CdTE) to a narrow-gap material without change of the optical transitions forming the interband edge. Now with (Pb,Sr)Se a material with rocksalt structure is available offering the same possibility. As an example, a critical re-examination of interband and intraband contributions to the refractive index is given. In the narrow-gap lead salts a maximum of n(E) near E<sub>g</sub> was found earlier and attributed to the rapid change of absorption coefficient at the interband absorption edge. On the basis of measurements of the real absorption edge slope, as determined both by band structure and by broadening, a study was made connecting for the first time the experimental absorption edge parameters with the n(E) maximum.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Interband and intraband contributions to refractive index in the new PbSe-based narrow-gap semiconductors
Тип paper
DOI 10.1088/0268-1242/8/1S/073
Electronic ISSN 1361-6641
Print ISSN 0268-1242
Журнал Semiconductor Science and Technology
Том 8
Первая страница S330
Последняя страница S333
Аффилиация K H Herrmann; Inst. fur Festkorperphys., Humboldt-Univ., Berlin, Germany
Аффилиация U Muller; Inst. fur Festkorperphys., Humboldt-Univ., Berlin, Germany
Аффилиация V Melzer; Inst. fur Festkorperphys., Humboldt-Univ., Berlin, Germany
Выпуск 1S

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