| Автор | A V Germanenko |
| Автор | G M Minkov |
| Автор | E L Rumyantsev |
| Автор | O E Rut |
| Дата выпуска | 1993-03-01 |
| dc.description | The exact solution at zero boundary condition of the problem of the carrier in a spatially confined gapless semiconductor in a magnetic field parallel to the surface is presented. It is shown that, because the energy spectrum of a gapless semiconductor is formed by a strong relativistic spin-orbit interaction, the space confinement leads to the effective attraction of the electron to the surface, which is different for different spin states. As a result, the energy of Landau levels in the case of one-side confinement of a semiconductor can even diminish when the oscillator centre is shifted towards the surface. The manifestation of the considered effect in tunnelling experiments is discussed. By solving the same problem in a gapless semiconductor film it is shown that the most striking effect, which has the same origin, is the confluence of the lowest electronic levels a<sub>1</sub> and b<sub>1</sub> and inversion of the sign of the g-factor for states with n>1 as the ratio of film width to the magnetic length is reduced. The possibility of the experimental testing of this phenomenon is discussed. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Energy spectrum of a gapless semiconductor in a longitudinal magnetic field under spatial confinement |
| Тип | paper |
| DOI | 10.1088/0268-1242/8/3/014 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 8 |
| Первая страница | 388 |
| Последняя страница | 393 |
| Аффилиация | A V Germanenko; Inst. of Phys. & Appl. Math., Ural State Univ., Ekaterinburg, Russia |
| Аффилиация | G M Minkov; Inst. of Phys. & Appl. Math., Ural State Univ., Ekaterinburg, Russia |
| Аффилиация | E L Rumyantsev; Inst. of Phys. & Appl. Math., Ural State Univ., Ekaterinburg, Russia |
| Аффилиация | O E Rut; Inst. of Phys. & Appl. Math., Ural State Univ., Ekaterinburg, Russia |
| Выпуск | 3 |
