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Автор A J Brouns
Автор T R Schimert
Автор P Mitra
Автор F C Case
Автор S L Barnes
Автор Y L Tyan
Дата выпуска 1993-06-01
dc.description A non-contact lifetime screening technique for measuring excess carrier lifetime in HgCdTe (MCT) using transient millimetre-wave reflectance (TMR) is presented. The TMR system described is capable of measuring lifetimes ranging from <or approximately=10 ns found in high-doped (>or approximately=1*10<sup>16</sup> cm<sup>-3</sup>) p-type material to >1 mu s found in low-doped (<or approximately=1*10<sup>15</sup> cm<sup>-3</sup>) n-type material. In TMR the reflected 90 GHz millimetre-wave (mm-wave) signal is proportional to a transient change in photoconductivity induced by a short (1.06 mu m) YAG laser pulse. The details of the TMR test system including the mm-wave circuit design are described. The system uses a computer controller for 80-300 K temperature control, x-y wafer translation and data acquisition and analysis. The TMR technique is shown to be equivalent to standard photoconductive decay. Applications of the technique, including MCT epilayer characterization by both frontside and backside illumination and in-process wafer characterization, are discussed. Spatial mapping of lifetime over an MCT wafer is demonstrated.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Non-contact lifetime screening technique for HgCdTe using transient millimetre-wave reflectance
Тип paper
DOI 10.1088/0268-1242/8/6S/013
Electronic ISSN 1361-6641
Print ISSN 0268-1242
Журнал Semiconductor Science and Technology
Том 8
Первая страница 928
Последняя страница 935
Аффилиация A J Brouns; Loral Vought Syst. Corp., Dallas, TX, USA
Аффилиация T R Schimert; Loral Vought Syst. Corp., Dallas, TX, USA
Аффилиация P Mitra; Loral Vought Syst. Corp., Dallas, TX, USA
Аффилиация F C Case; Loral Vought Syst. Corp., Dallas, TX, USA
Аффилиация S L Barnes; Loral Vought Syst. Corp., Dallas, TX, USA
Аффилиация Y L Tyan; Loral Vought Syst. Corp., Dallas, TX, USA
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