| Автор | W V McLevige |
| Автор | G M Williams |
| Автор | R E DeWames |
| Автор | J Bajaj |
| Автор | I S Gergis |
| Автор | A H Vanderwyck |
| Автор | E R Blazejewski |
| Дата выпуска | 1993-06-01 |
| dc.description | The authors investigate the separate dark current components which are dominant in the diffusion-limited regime in MWIR n/p HgCdTe/CdTe/sapphire photodetectors. Both mesa and planar configurations of variable-area diodes were fabricated and evaluated over the temperature range from 78 to 250 K. Simple analytical expressions are used to calculate the contributions of bulk, lateral and surface effects from the perimeter/area dependence of R<sub>0</sub>A and measurement of the minority carrier diffusion length. The analysis indicates that at 180 K the mesa diode results can be accounted for by bulk and lateral currents, but that the planar diodes are limited by surface currents. The 180 K median R<sub>0</sub>A for the mesa diodes ranges from 63 Omega cm<sup>2</sup> for 500*500 mu m<sup>2</sup> diode areas to 14 Omega cm<sup>2</sup> for 30*30 mu m<sup>2</sup> diodes at a cut-off wavelength of 4.64 mu m. Scanning laser microscope measurements determine the 180 K electron minority carrier diffusion length to be 17-18 mu m. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Variable-area diode data analysis of surface and bulk effects in MWIR HgCdTe/CdTe/sapphire photodetectors |
| Тип | paper |
| DOI | 10.1088/0268-1242/8/6S/016 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 8 |
| Первая страница | 946 |
| Последняя страница | 952 |
| Аффилиация | W V McLevige; Rockwell Int. Sci. Center, Thousand Oaks, CA, USA |
| Аффилиация | G M Williams; Rockwell Int. Sci. Center, Thousand Oaks, CA, USA |
| Аффилиация | R E DeWames; Rockwell Int. Sci. Center, Thousand Oaks, CA, USA |
| Аффилиация | J Bajaj; Rockwell Int. Sci. Center, Thousand Oaks, CA, USA |
| Аффилиация | I S Gergis; Rockwell Int. Sci. Center, Thousand Oaks, CA, USA |
| Аффилиация | A H Vanderwyck; Rockwell Int. Sci. Center, Thousand Oaks, CA, USA |
| Аффилиация | E R Blazejewski; Rockwell Int. Sci. Center, Thousand Oaks, CA, USA |
| Выпуск | 6S |
