| Автор | M C Arikan |
| Автор | Y Ergun |
| Автор | N Balkan |
| Автор | B K Ridley |
| Дата выпуска | 1993-07-01 |
| dc.description | The results of investigations into in-plane photoconductivity in GaAs/Ga<sub>0.7</sub>Al<sub>0.3</sub>As multiple quantum wells are presented. The results indicate clearly that the experimental technique can be used as a reliable and sensitive tool to determine the purity of the material and the excitonic transitions that occur in the quantum well structures. It is shown that the photoconductivity is a strong function of the excitation intensity and the modulation frequency. The effects of DC background illumination and the application of longitudinal electric fields are also studied and the results are compared with a model based on hot-electron percolation in quantum well structures. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | In-plane photoconductive properties of MBE-grown GaAs/GaAlAs multiple quantum wells |
| Тип | paper |
| DOI | 10.1088/0268-1242/8/7/024 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 8 |
| Первая страница | 1337 |
| Последняя страница | 1346 |
| Аффилиация | M C Arikan; Dept. of Phys., TUBITAK, Kocaeli, Turkey |
| Аффилиация | Y Ergun; Dept. of Phys., TUBITAK, Kocaeli, Turkey |
| Аффилиация | N Balkan; Dept. of Phys., TUBITAK, Kocaeli, Turkey |
| Аффилиация | B K Ridley; Dept. of Phys., TUBITAK, Kocaeli, Turkey |
| Выпуск | 7 |
