| Автор | D M Symons |
| Автор | M Lakrimi |
| Автор | R J Warburton |
| Автор | R J Nicholas |
| Автор | N J Mason |
| Автор | P J Walker |
| Автор | M I Eremets |
| Дата выпуска | 1994-01-01 |
| dc.description | The band overlap at the InAs-GaSb interface has been measured using electron and hole densities deduced from magnetotransport measurements, combined with self-consistent energy level calculations, for structures with both (001) and (111)A orientations. This band crossing is found to be 140 meV for the (001) orientation but increases to 200 meV for (111)A. The difference is attributed to the presence of an interface dipole for (111)A growth. In addition, the band overlap decreases, with applied hydrostatic pressure, at a higher rate for the (111)A orientation. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Orientation and pressure dependence of the band overlap in InAs/GaSb structures |
| Тип | paper |
| DOI | 10.1088/0268-1242/9/1/021 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 9 |
| Первая страница | 118 |
| Последняя страница | 122 |
| Аффилиация | D M Symons; Dept. of Phys., Oxford Univ., UK |
| Аффилиация | M Lakrimi; Dept. of Phys., Oxford Univ., UK |
| Аффилиация | R J Warburton; Dept. of Phys., Oxford Univ., UK |
| Аффилиация | R J Nicholas; Dept. of Phys., Oxford Univ., UK |
| Аффилиация | N J Mason; Dept. of Phys., Oxford Univ., UK |
| Аффилиация | P J Walker; Dept. of Phys., Oxford Univ., UK |
| Аффилиация | M I Eremets; Dept. of Phys., Oxford Univ., UK |
| Выпуск | 1 |
