| Автор | A V Abramov |
| Автор | N G Deryagin |
| Автор | D N Tretyakov |
| Дата выпуска | 1994-10-01 |
| dc.description | A modification of liquid-phase epitaxy has been developed to grow epitaxial layers by ultrafast cooling ( approximately 10<sup>2</sup>-10<sup>3</sup> degrees C s<sup>-1</sup>) of solutions supersaturated beyond the critical value. Epilayers of GaAs and metastable (Ge<sub>2</sub>)<sub>x</sub>(GaAs)<sub>1-x</sub> solid solutions were grown on Si (111) substrates, and specific features of the crystallization process were investigated. It is shown that, for GaAs layers to grow on Si, Ga and Sn solutions must be supercooled far below the critical point in the initial growth stage. The composition, structural perfection and luminescence properties of the grown layers have been studied. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Growth of GaAs and (Ge<sub>2</sub>)<sub>x</sub>(GaAs)<sub>1-x</sub> on Si using ultrafast cooling of the growth solution |
| Тип | paper |
| DOI | 10.1088/0268-1242/9/10/011 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 9 |
| Первая страница | 1815 |
| Последняя страница | 1822 |
| Аффилиация | A V Abramov; A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia |
| Аффилиация | N G Deryagin; A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia |
| Аффилиация | D N Tretyakov; A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia |
| Выпуск | 10 |
