| Автор | Yu V Medvedev |
| Автор | N N Berchenko |
| Дата выпуска | 1994-12-01 |
| dc.description | The solid phase part of the Hg-Zn-Te-O equilibrium phase diagram has been estimated from thermodynamic calculations. It was found that, contrary to other A<sup>2</sup>B<sup>6</sup> tellurides, ZnTe possesses a preferable oxidation of metal, leaving elemental tellurium at the native oxide-ZnTe interface. It is shown that, as a result, the electrical properties and thermal stability of the native oxide-Hg<sub>1-x</sub>Zn<sub>x</sub>Te interface are superior to those of the native oxide-Hg<sub>1-x</sub>Cd<sub>x</sub>Te interface. Hence, in terms of the interface properties, Hg<sub>1-x</sub>Zn<sub>x</sub>Te seems to be a better material for infrared device applications. It is also demonstrated that for a semiconductor compound the equilibrium phase diagram qualitatively determines the electrical properties of the native oxide-semiconductor interface. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Thermodynamic properties of the native oxide-Hg<sub>1-x</sub>Zn<sub>x</sub>Te interface |
| Тип | paper |
| DOI | 10.1088/0268-1242/9/12/015 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 9 |
| Первая страница | 2253 |
| Последняя страница | 2257 |
| Аффилиация | Yu V Medvedev; Phys. Inst., Koln Univ., Germany |
| Аффилиация | N N Berchenko; Phys. Inst., Koln Univ., Germany |
| Выпуск | 12 |
