The structure and vibrational modes of H-C<sub>As</sub> pairs in passivated AlAs grown by chemical beam epitaxy
R E Pritchard; B R Davidson; R C Newman; T J Bullough; T B Joyce; R Jones; S Oberg; R E Pritchard; Blackett Lab., Imperial Coll. of Sci., Technol. & Med., London, UK; B R Davidson; Blackett Lab., Imperial Coll. of Sci., Technol. & Med., London, UK; R C Newman; Blackett Lab., Imperial Coll. of Sci., Technol. & Med., London, UK; T J Bullough; Blackett Lab., Imperial Coll. of Sci., Technol. & Med., London, UK; T B Joyce; Blackett Lab., Imperial Coll. of Sci., Technol. & Med., London, UK; R Jones; Blackett Lab., Imperial Coll. of Sci., Technol. & Med., London, UK; S Oberg; Blackett Lab., Imperial Coll. of Sci., Technol. & Med., London, UK
Журнал:
Semiconductor Science and Technology
Дата:
1994-02-01
Аннотация:
AlAs layers grown by chemical beam epitaxy (CBE) and doped with either <sup>12</sup>C or <sup>13</sup>C have been passivated with hydrogen or deuterium. Infrared absorption lines due to hydrogen stretch modes, symmetric A<sub>1</sub>, modes and 'carbon-like' E modes of H-C<sub>As</sub> and D-C<sub>As</sub> pairs have been assigned for both carbon isotopes. Comparisons have been made with previous measurements made on H-C<sub>As</sub> centres in GaAs:C and with simple harmonic models, and the results are shown to be in agreement with ab initio local density functional calculations.
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