Copper in ultra-pure germanium: determination of the electrically active fraction
B A Andreev; G G Devyatykh; V A Gavva; D M Gordeev; A V Gusev; G A Maksimov; V G Pimenov; V B Shmagin; D A Timonin; B A Andreev; Inst. of Chem. of High-Purity Substances, Acad. of Sci., Nizhny Novgorod, Russia; G G Devyatykh; Inst. of Chem. of High-Purity Substances, Acad. of Sci., Nizhny Novgorod, Russia; V A Gavva; Inst. of Chem. of High-Purity Substances, Acad. of Sci., Nizhny Novgorod, Russia; D M Gordeev; Inst. of Chem. of High-Purity Substances, Acad. of Sci., Nizhny Novgorod, Russia; A V Gusev; Inst. of Chem. of High-Purity Substances, Acad. of Sci., Nizhny Novgorod, Russia; G A Maksimov; Inst. of Chem. of High-Purity Substances, Acad. of Sci., Nizhny Novgorod, Russia; V G Pimenov; Inst. of Chem. of High-Purity Substances, Acad. of Sci., Nizhny Novgorod, Russia; V B Shmagin; Inst. of Chem. of High-Purity Substances, Acad. of Sci., Nizhny Novgorod, Russia; D A Timonin; Inst. of Chem. of High-Purity Substances, Acad. of Sci., Nizhny Novgorod, Russia
Журнал:
Semiconductor Science and Technology
Дата:
1994-05-02
Аннотация:
This paper reports direct measurement of the total Cu concentration and its electrically active fraction in ultra-pure Ge crystals. The fraction of electrically active Cu atoms is shown to be 3*10<sup>-3</sup> in hydrogen-grown Ge and 3*10<sup>-2</sup> in vacuum-grown Ge. The state of Cu in ultra-pure Ge crystals and the passivation of electrically active Cu-related centres by hydrogen are discussed.
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