Dependence of resonant electron and hole tunnelling times between quantum wells on barrier thickness
A P Heberle; X Q Zhou; A Tackeuchi; W W Ruhle; K Kohler; A P Heberle; Max-Planck-Inst. fur Festkorperforschung, Stuttgart, Germany; X Q Zhou; Max-Planck-Inst. fur Festkorperforschung, Stuttgart, Germany; A Tackeuchi; Max-Planck-Inst. fur Festkorperforschung, Stuttgart, Germany; W W Ruhle; Max-Planck-Inst. fur Festkorperforschung, Stuttgart, Germany; K Kohler; Max-Planck-Inst. fur Festkorperforschung, Stuttgart, Germany
Журнал:
Semiconductor Science and Technology
Дата:
1994-05-01
Аннотация:
We investigated resonant tunnelling of electrons and holes between coupled quantum wells using time-resolved luminescence spectroscopy. Exponential dependence of tunnelling times on barrier width is observed for electrons but not for holes. The tunnelling times of electrons are correctly described by a model which takes into account inhomogeneous broadening.
331.3Кб