| Автор | P C M Christianen |
| Автор | E J A de Bekker |
| Автор | H J A Bluyssen |
| Автор | P R Hageman |
| Автор | M R Leys |
| Дата выпуска | 1994-05-01 |
| dc.description | The combined effect of a short carrier lifetime and of phonon emission on the cooling rate of nearly resonantly excited carriers in bulk GaAs has been investigated using picosecond time-resolved photoluminescence. Intense photoexcitation of carriers results in very short carrier density decay times of about 20 ps, leading to a considerable reduction of the cooling rate. The rapid density decay is attributed to a high stimulated recombination rate due to a high density accompanied by a low effective carrier temperature. Inclusion of the stimulated recombination in a model calculation for the energy relaxation by phonon emission leads to a significant recombination heating, which nicely explains the observed reduction of the carrier cooling rate. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Cooling reduction due to a rapid density decay of hot carriers in GaAs |
| Тип | paper |
| DOI | 10.1088/0268-1242/9/5S/084 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 9 |
| Первая страница | 713 |
| Последняя страница | 715 |
| Аффилиация | P C M Christianen; High Field Magnet Lab., Nijmegen Univ., Netherlands |
| Аффилиация | E J A de Bekker; High Field Magnet Lab., Nijmegen Univ., Netherlands |
| Аффилиация | H J A Bluyssen; High Field Magnet Lab., Nijmegen Univ., Netherlands |
| Аффилиация | P R Hageman; High Field Magnet Lab., Nijmegen Univ., Netherlands |
| Аффилиация | M R Leys; High Field Magnet Lab., Nijmegen Univ., Netherlands |
| Выпуск | 5S |
