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Автор E Ozturk
Автор N C Constantinou
Автор A Straw
Автор N Balkan
Автор B K Ridley
Автор D A Ritchie
Автор E H Linfield
Автор A C Churchill
Автор G A C Jones
Дата выпуска 1994-05-01
dc.description We demonstrate via hot-electron photoluminescence and high-temperature mobility measurements the importance of the AlAs interface mode in the energy relaxation of electrons in GaAs/AlAs multi-quantum wells. A corresponding investigation of a similar GaAs/Al<sub>0.24</sub>Ga<sub>0.76</sub>As system illustrates that this is not the case for AlGaAs barrier devices where GaAs modes are the dominant energy relaxation process. The importance of the AlAs interface mode is not simply related to its intrinsic scattering rate but also to its shorter lifetime (compared with GaAs modes). Hot-phonon effects are therefore crucial to a full understanding of the experimental data.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Hot-electron relaxation via the emission of GaAs optical modes and AlAs interface modes in GaAs/AlAs multi-quantum wells
Тип paper
DOI 10.1088/0268-1242/9/5S/104
Electronic ISSN 1361-6641
Print ISSN 0268-1242
Журнал Semiconductor Science and Technology
Том 9
Первая страница 782
Последняя страница 785
Аффилиация E Ozturk; Dept. of Phys., Essex Univ., Colchester, UK
Аффилиация N C Constantinou; Dept. of Phys., Essex Univ., Colchester, UK
Аффилиация A Straw; Dept. of Phys., Essex Univ., Colchester, UK
Аффилиация N Balkan; Dept. of Phys., Essex Univ., Colchester, UK
Аффилиация B K Ridley; Dept. of Phys., Essex Univ., Colchester, UK
Аффилиация D A Ritchie; Dept. of Phys., Essex Univ., Colchester, UK
Аффилиация E H Linfield; Dept. of Phys., Essex Univ., Colchester, UK
Аффилиация A C Churchill; Dept. of Phys., Essex Univ., Colchester, UK
Аффилиация G A C Jones; Dept. of Phys., Essex Univ., Colchester, UK
Выпуск 5S

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