| Автор | A E Belyaev |
| Автор | S M Komirenko |
| Автор | Yu G Semenov |
| Автор | N V Shevchenko |
| Дата выпуска | 1994-06-01 |
| dc.description | An S-shaped voltage-current characteristic (vcc) has been observed in the semimagnetic semiconductor p-Mn<sub>x</sub>Hg<sub>1-x</sub>Te with a sufficiently strong compensation. It is suggested that the amplification of fluctuations of the energy of shallow impurity centres which stem from fluctuations of the composition of the semiconducting solid solution (as in the case of p-Mn<sub>x</sub>Hg<sub>1-x</sub>Te which is considered in this paper) improves the conditions for formation of an S-shaped vcc due to development of a non-equilibrium carrier distribution in an impurity band during impact ionization. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Low-temperature impurity breakdown in the semimagnetic semiconductor p-Hg<sub>1-x</sub>Mn<sub>x</sub>Te |
| Тип | paper |
| DOI | 10.1088/0268-1242/9/6/003 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 9 |
| Первая страница | 1176 |
| Последняя страница | 1182 |
| Аффилиация | A E Belyaev; Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine |
| Аффилиация | S M Komirenko; Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine |
| Аффилиация | Yu G Semenov; Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine |
| Аффилиация | N V Shevchenko; Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine |
| Выпуск | 6 |
