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Автор M G Daly
Автор D M Bruce
Автор P E Jessop
Автор D T Cassidy
Автор D Yevick
Дата выпуска 1994-07-01
dc.description Although contact metallization causes stress in the underlying material, the magnitude of the resulting change in refractive index is often not appreciated. We investigate here the distribution of the change in refractive index due to stress caused by Ti/Pt/Au contact layers in weakly guiding InGaAsP waveguides operating near 1.3 mu m. Polarization-resolved photoluminescence and beam propagation calculations, combined with a simple stress model, are applicable to general processing-induced stress in InP-based waveguides and to waveguide design.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Metallization stress in weakly guiding InP/InGaAsP waveguides
Тип paper
DOI 10.1088/0268-1242/9/7/016
Electronic ISSN 1361-6641
Print ISSN 0268-1242
Журнал Semiconductor Science and Technology
Том 9
Первая страница 1387
Последняя страница 1390
Аффилиация M G Daly; Centre for Electrophotonic Mater. & Devices, McMaster Univ., Hamilton, Ont., Canada
Аффилиация D M Bruce; Centre for Electrophotonic Mater. & Devices, McMaster Univ., Hamilton, Ont., Canada
Аффилиация P E Jessop; Centre for Electrophotonic Mater. & Devices, McMaster Univ., Hamilton, Ont., Canada
Аффилиация D T Cassidy; Centre for Electrophotonic Mater. & Devices, McMaster Univ., Hamilton, Ont., Canada
Аффилиация D Yevick; Centre for Electrophotonic Mater. & Devices, McMaster Univ., Hamilton, Ont., Canada
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