| Автор | J W Orton |
| Автор | P Dawson |
| Автор | D E Lacklison |
| Автор | T S Cheng |
| Автор | C T Foxon |
| Дата выпуска | 1994-09-01 |
| dc.description | We report the results of photoluminescence and minority carrier lifetime measurements on a set of lightly doped AlGaAs/GaAs quantum well structures grown by solid source molecular beam epitaxy. Growth temperatures were varied between 600 and 700 degrees C and the arsenic supplied in dimer or tetramer form. The lifetimes show a marked dependence on growth temperature when As<sub>4</sub> is used, peaking sharply in the region of 675 degrees C, but are sensibly independent of growth temperature when using As<sub>2</sub>. They are nearly an order of magnitude less than the radiative lifetimes expected for the doping levels used, so we interpret our results in terms of Shockley-Read recombination via deep centres in the barrier material. Lifetimes measured on n- and p-type samples are closely similar, which can be explained in terms of a modified version of the standard Shockley-Read process, appropriate to the pseudo two-dimensional structures of interest here, provided the recombination centre is acceptor-like. We propose that it is related to oxygen incorporated in the Al-containing barrier regions. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Recombination lifetime measurements in AlGaAs/GaAs quantum well structures |
| Тип | paper |
| DOI | 10.1088/0268-1242/9/9/008 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 9 |
| Первая страница | 1616 |
| Последняя страница | 1622 |
| Аффилиация | J W Orton; Dept. of Electr. & Electron. Eng., Nottingham Univ., UK |
| Аффилиация | P Dawson; Dept. of Electr. & Electron. Eng., Nottingham Univ., UK |
| Аффилиация | D E Lacklison; Dept. of Electr. & Electron. Eng., Nottingham Univ., UK |
| Аффилиация | T S Cheng; Dept. of Electr. & Electron. Eng., Nottingham Univ., UK |
| Аффилиация | C T Foxon; Dept. of Electr. & Electron. Eng., Nottingham Univ., UK |
| Выпуск | 9 |
