| Автор | E V Jelenkovic |
| Автор | K Y Tong |
| Автор | M C Poon |
| Автор | J S L Wong |
| Дата выпуска | 1994-09-01 |
| dc.description | Fluorine was introduced by ion implantation into MOS structures with sputtered oxide. After annealing, its effects on the high-frequency C-V curve and Fowler-Nordheim tunnelling barrier height were studied. An increase of acceptor dopant concentration in the substrate was observed due to the fluorine implantation. The presence of fluorine increased the Fowler-Nordheim tunnelling barrier height for electron injection from both metal and silicon. The role of fluorine is explained by a physical model similar to that used by Ma, where fluorine is assumed to bond with trivalent silicon trap centres in the sputtered oxide. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Effect of implanted fluorine on MOS structures with sputtered SiO<sub>2</sub> insulator |
| Тип | paper |
| DOI | 10.1088/0268-1242/9/9/016 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 9 |
| Первая страница | 1673 |
| Последняя страница | 1678 |
| Аффилиация | E V Jelenkovic; Dept. of Electron. Eng., Hong Kong Polytech., Hung Hom, Hong Kong |
| Аффилиация | K Y Tong; Dept. of Electron. Eng., Hong Kong Polytech., Hung Hom, Hong Kong |
| Аффилиация | M C Poon; Dept. of Electron. Eng., Hong Kong Polytech., Hung Hom, Hong Kong |
| Аффилиация | J S L Wong; Dept. of Electron. Eng., Hong Kong Polytech., Hung Hom, Hong Kong |
| Выпуск | 9 |
