| Автор | H Yusheng |
| Автор | A D C Graissie |
| Дата выпуска | 1985-02-01 |
| dc.description | For pt.II see ibid., vol.15, p.337 (1985). Band-structure parameters derived for Pb<sub>1-x</sub>Sn<sub>x</sub>Te in paper I of this series from a Shubnikov-de Haas study are shown to give good agreement with the carrier concentration dependence observed for the anisotropy and the transverse effective mass in p-type PbTe. The parameters are also capable of yielding the x dependence of the anisotropy of the Fermi surfaces in Pb<sub>1-x</sub>Sn<sub>x</sub>Te in the cubic phase at low temperatures. With regard to the band structures deduced for the rhombohedral phase of Pb<sub>1-x</sub>Sn<sub>x</sub>Te, these are found to be capable of explaining the hitherto unexplained de Hass-van Alphen measurements of SnTe at low carrier concentration. The complexity of the Fermi surface for such low-carrier concentration SnTe is discussed. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | The electronic band structure of Pb<sub>1-x</sub>Sn<sub>x</sub>Te alloys. III. Implications for the Fermi surface of SnTe |
| Тип | paper |
| DOI | 10.1088/0305-4608/15/2/011 |
| Print ISSN | 0305-4608 |
| Журнал | Journal of Physics F: Metal Physics |
| Том | 15 |
| Первая страница | 363 |
| Последняя страница | 376 |
| Аффилиация | H Yusheng; Phys. Lab., Sussex Univ., Brighton, UK |
| Аффилиация | A D C Graissie; Phys. Lab., Sussex Univ., Brighton, UK |
| Выпуск | 2 |
