Electrical resistivity due to dissolved H in Pd
A Szokefalvi-Nagy; X Y Huang; R Kirchheim; A Szokefalvi-Nagy; Max-Planck Inst. fur Metallforschung, Stuttgart, West Germany; X Y Huang; Max-Planck Inst. fur Metallforschung, Stuttgart, West Germany; R Kirchheim; Max-Planck Inst. fur Metallforschung, Stuttgart, West Germany
Журнал:
Journal of Physics F: Metal Physics
Дата:
1987-02-01
Аннотация:
The incremental resistivity of hydrogen in alpha -Pd has been measured in the temperature range 250-350 K at hydrogen concentrations below 1 at.%. The reliability of the values obtained by electrochemical doping with H is discussed. The strong temperature dependence of the incremental resistivity is due to the electron scattering on optical phonons having a low excitation energy in dilute Pd-H.
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