| Автор | T G Ramesh |
| Автор | V Shubha |
| Автор | S Ramaseshan |
| Дата выпуска | 1977-06-01 |
| dc.description | The semimetal-semiconductor transition in ytterbium has been studied in the pressure range 0.50 kbar and up to 600 degrees C using the Seebeck coefficient as a tool. In the FCC phase the thermoelectric power exhibits a marked increase with pressure and the semimetal-semiconductor transition is observed as a change in the slope. In the semiconducting phase the thermopower initially increases very rapidly with pressure followed by a steep decrease at higher pressures. The temperature coefficient of thermopower in the semiconducting phase increase is large and positive in contrast to the semimetallic phase. The FCC-HCP transformation at high temperatures is reported. A semimetal-semiconductor transition in the HCP phase has also been observed. The experimental results are discussed qualitatively on the basis of a simplified two-band model. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Phase transitions in ytterbium under pressure (semimetal-semiconductor transition) |
| Тип | paper |
| DOI | 10.1088/0305-4608/7/6/014 |
| Print ISSN | 0305-4608 |
| Журнал | Journal of Physics F: Metal Physics |
| Том | 7 |
| Первая страница | 981 |
| Последняя страница | 990 |
| Аффилиация | T G Ramesh; Materials Div., Nat. Aeronautical Lab., Bangalore, India |
| Аффилиация | V Shubha; Materials Div., Nat. Aeronautical Lab., Bangalore, India |
| Аффилиация | S Ramaseshan; Materials Div., Nat. Aeronautical Lab., Bangalore, India |
| Выпуск | 6 |
