| Автор | E H Putley |
| Автор | W H Mitchell |
| Дата выпуска | 1958-08-01 |
| dc.description | The electrical conductivity and Hall effect have been measured over the temperature range 20°K to 500°K on single crystals of silicon with extrinsic carrier concentrations between 2 and 5 × 10<sup>12</sup> cm<sup>-3</sup>. The Hall mobility for electrons and holes can be represented between 100° and 300°K by the expression 1.2 × 10<sup>8</sup>T<sup>-2</sup> and 2.9 × 10<sup>9</sup>T<sup>-2.7</sup> respectively. Both these results indicate a higher Hall mobility than has been previously reported, and the result for holes is greater than values reported for the drift mobility. From the results between 350° and 500°K the expression n<sub>i</sub> = 3.10 × 10<sup>16</sup>T<sup>3/2</sup> exp -0.603/kT was obtained for the intrinsic concentration. Attempts were made to estimate the total impurity concentration in these specimens. The variation of extrinsic carrier concentration with temperature and the effect of impurity scattering at 20°K both indicate that the total concentration of impurities is less than 10<sup>14</sup> cm<sup>-3</sup>. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | The Electrical Conductivity and Hall Effect of Silicon |
| Тип | paper |
| DOI | 10.1088/0370-1328/72/2/303 |
| Print ISSN | 0370-1328 |
| Журнал | Proceedings of the Physical Society |
| Том | 72 |
| Первая страница | 193 |
| Последняя страница | 200 |
| Аффилиация | E H Putley; Royal Radar Establishment, Malvern, Worcs |
| Аффилиация | W H Mitchell; Royal Radar Establishment, Malvern, Worcs |
| Выпуск | 2 |
