| Автор | L J Sham |
| Дата выпуска | 1963-05-01 |
| dc.description | Deformation potentials associated with the conduction band edge in Si are calculated using a pseudo-potential rigid ion model and the results of the band structure calculation made by Kleinman and Phillips in 1960. This simple method should give a good estimate for Θ<sub>u</sub>, the shear component, but not necessarily for Θ<sub>d</sub>. The calculated value of Θ<sub>u</sub>, 8.4±0.3 eV, agrees well with experiment but there is no agreement for Θ<sub>d</sub>. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | A Calculation of Deformation Potentials in Silicon |
| Тип | paper |
| DOI | 10.1088/0370-1328/81/5/318 |
| Print ISSN | 0370-1328 |
| Журнал | Proceedings of the Physical Society |
| Том | 81 |
| Первая страница | 934 |
| Последняя страница | 937 |
| Аффилиация | L J Sham; Cavendish Laboratory, University of Cambridge |
| Выпуск | 5 |
