| Автор | A C Papadakis |
| Автор | P N Keating |
| Дата выпуска | 1965-05-01 |
| dc.description | Transport of carriers induced in high resistivity materials as a result of a short duration ionizing process is considered for the case where the region of ionization extends throughout the interelectrode distance. A simple one-carrier model, neglecting carrier recombination and diffusion, is used to derive expressions for the induced charge and current flowing through the external circuit, and for the carrier transit time, when the applied field is greater than half the maximum field set up by the immobile carrier space charge. It is concluded that under certain conditions the shape of the current or charge pulses may be used to determine the electron mobility in films and thin crystals of low-mobility solids. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | The drift of carriers after uniform, instantaneous ionization throughout an insulator |
| Тип | paper |
| DOI | 10.1088/0508-3443/16/5/303 |
| Print ISSN | 0508-3443 |
| Журнал | British Journal of Applied Physics |
| Том | 16 |
| Первая страница | 613 |
| Последняя страница | 617 |
| Аффилиация | A C Papadakis; Associated Electrical Industries Research Laboratories, Harlow, Essex |
| Аффилиация | P N Keating; Associated Electrical Industries Research Laboratories, Harlow, Essex |
| Выпуск | 5 |
